By Wolfgang Rainer Fahrner (auth.), Wolfgang Rainer Fahrner (eds.)

Amorphous Silicon/Crystalline Silicon sunlight Cells offers with a few average houses of heterojunction sun cells, resembling their background, the homes and the demanding situations of the cells, a few very important measurementtools, a few simulation courses and a short survey of the state-of-the-art, aiming to supply an preliminary framework during this box and function a prepared reference for all these attracted to the topic. This publication is helping to “fill within the blanks” on heterojunction sunlight cells. Readers will obtain a finished evaluation of the rules, buildings, processing options and the present developmental states of the units.

Prof. Dr. Wolfgang R. Fahrner is a professor on the collage of Hagen, Germany and Nanchang collage, China.

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It has to be mentioned that the process parameters have to be carefully adjusted to obtain such high-quality a-SiOx:H films. 4 eV, depending on the oxygen fraction in the precursor gas, is obtained by adding oxygen to the a-SiOx:H layers. The a-SiOx:H films exhibit a very low blue light absorption compared to a-Si:H(i) (cf. Fig. 31), enabling a thicker passivation layer than standard a-Si:H(i) and therefore an increasing passivation quality. Furthermore, the applicability of a-SiOx:H layers as a high-quality passivation scheme used in heterojunction solar cell fabrication is an effective alternative to standard a-Si:H(i) buffer layers.

Results on the influence of those films compared to standard a-Si:H by Mueller et al. can be found in [141]. Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells 37 It is found that the fraction of microcrystallinity can be varied as a function of hydrogen dilution. Low hydrogen dilution results in a larger fraction of amorphous structures inside the deposited film, whereas high H2 dilution ([98 %) results in a more microcrystalline character. 1 X cm) at optimal PECV deposition parameters.

This controversy has an analogy in the history of the GaAlAs/GaAs heterojunction, where in earlier times, the Dingle rule [103] assumed a 85:15 % distribution of the hetero-band offset between conduction and valence band, while later on a 60:40 % distribution has been found [104]. This shows that even in classical III–V semiconductor heterojunctions, the interfacial properties are not easy to determine. An excellent discussion of this history is given by Kroemer [105]. As a consequence, it was recognized quite early that the p-type a-Si:H emitter on n-type substrates led to distinctly higher open-circuit voltages and hence higher efficiencies compared to n-type a-Si:H emitters on p-type substrates [106].

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